2004 international conference on indium phosphide and related materials (16th IPRM, conference proceedings)International Conference on Indium Phosphide and Related Materials. 2004, isbn 0-7803-8595-0, 1Vol, XIV-778 p, isbn 0-7803-8595-0Conference Proceedings

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Internal strain and photoelastic effects in Ga_1-xAl_xAs/GaAs and In_1-xGa_xAsyP_1-yADACHI, S; OE, K.Journal of applied physics. 1983, Vol 54, Num 11, pp 6620-6627, issn 0021-8979Article

BAND-TO-BAND AUGER EFFECT IN LONG WAVELENGTH MULTINARY III-V ALLOY SEMICONDUCTOR LASERSSUGIMURA A.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 3; PP. 352-363; BIBL. 50 REF.Article

ROLE OF DANGLING BONDS AND ANTISITE DEFECTS IN RAPID AND GRADUAL III-V LASER DEGRADATIONDOW JD; ALLEN RE.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 672-674; BIBL. 21 REF.Article

ETUDE DE LA CARACTERISATION PAR TOPOLUMINESCENCE D'ALLIAGES III-V TERNAIRES ET QUATERNAIRESMARCHETAUX JEAN CLAUDE.1979; ; FRA; DA. 1979; 96 P.-PL.; 30 CM; BIBL. 55 REF.; TH. DOCT.-ING.: MATIERES RAYONNEM./CAEN/1979Thesis

Zero-current voltage oscillations in GaAs-AlGaAs heterojunctionsGRASSIE, A. D. C; LAKRIMI, M; HUTCHINGS, K. M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 983-987, issn 0268-1242Article

III-V Semiconductor integrated circuits: a perspectiveMANDAL, R. P.Solid state technology. 1982, Vol 25, Num 1, pp 94-103, issn 0038-111XArticle

GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 μm lasing wavelengths grown by atmospheric pressure MOVPEGESSNER, R; DRUMINSKI, M; BESCHORNER, M et al.Electronics Letters. 1989, Vol 25, Num 8, pp 516-517, issn 0013-5194, 2 p.Article

Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article

Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsROCKETT, P. I.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1573-1579, issn 0018-9383Article

The fabrication of sub-micron width mesas in GaAs/Ga_1-xAl_xAs heterojunction materialHUTCHINGS, K. M; GRASSIE, A. D. C; LAKRIMI, M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1057-1059, issn 0268-1242Article

Characterization of multilayer GaAs/AlGaAs transistor structures by variable angle spectroscopic ellipsometryMERKEL, K. G; SNYDER, P. G; WOOLLAM, J. A et al.Japanese journal of applied physics. 1989, Vol 28, Num 6, pp 1118-1123, issn 0021-4922, 6 p., 1Article

Frequency response of InP/InGaAsP/InGaAs avalanche photodiodesCAMPBELL, J. C; JOHNSON, B. C; QUA, G. J et al.Journal of lightwave technology. 1989, Vol 7, Num 5, pp 778-784, issn 0733-8724, 7 p.Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Structural and electrical investigation of high temperature Fe implanted gainp layers lattice matched to GaAsCESCA, T; GASPAROTTO, A; VEMA, A et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 276-277, isbn 0-7803-8595-0, 1Vol, 2 p.Conference Paper

Effective-mass superlatticeSASAKI, A.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7016-7020, issn 0163-1829Article

On the possibility of intrinsic negative differential resistance in III-V quantum wellsRIDLEY, B. K.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 22, pp L789-L790, issn 0022-3719Article

REPLY TO COMMENT ON "MISCIBILITY GAPS IN QUATERNARY II/V ALLOYS" BY B. DE CREMOUX, P. HIRTZ AND J. RICCIARDISTRINGFELLOW GB.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 1; PP. 179; BIBL. 2 REF.Article

PIEZOELECTRIC COUPLING AND DISLOCATIONS IN III-V COMPOUNDSBOOYENS H; VERMAAK JS.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4302-4306; BIBL. 11 REF.Article

THERMODYNAMISCHE STUDIEN AN A^III-B^V-VERBINDUNGEN = ETUDES THERMODYNAMIQUES SUR LES COMPOSES A^III-B^VPEUSCHEL GP; APELT R; KNOBLOCH G et al.1979; KRISTALL U. TECH.; DDR; DA. 1979; VOL. 14; NO 4; PP. 409-412; ABS. ENG; BIBL. 12 REF.Article

BOWING EFFECT OF DIRECT ENERGY GAP IN III-V TERNARY ALLOYSYOSHIOKA H; SONOMURA H; MIYAUCHI T et al.1978; BULL. UNIV. OSAKA PREFECT., A; JPN; DA. 1978; VOL. 27; NO 2; PP. 137-147; BIBL. 9 REF.Article

EFFECT OF ARSENIC DIMER/TETRAMER RATIO ON STABILITY OF III-V COMPOUND SURFACES GROWN BY MOLECULAR BEAM EPITAXYWOOD CEC; STANLEY CR; WICKS GW et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1868-1871; BIBL. 17 REF.Article

A PROPOSED HYDROGENATION/NITRIDIZATION PASSIVATION MECHANISM FOR GAAS AND OTHER III-V SEMICONDUCTOR DEVICES, INCLUDING INGAAS LONG WAVELENGTH PHOTODETECTORSCAPASSO F; WILLIAMS GF.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 821-824; BIBL. 18 REF.Article

KONTAKTWIDERSTANDSMESSUNG AM SCHRAEGSCHLIFF. EIN VERFAHREN ZUR SCHICHTENPROFILMESSUNG AN A^IIIB^V-VERBINDUNGEN = MESURE DE RESISTANCE DE CONTACT LE LONG D'UNE SURFACE POLIE INCLINEE. METHODE DE MESURE DES PROFILS DE STRUCTURES MULTICOUCHES A^IIIB^VPITTROFF W; BACHERT HJ.1981; EXPERIMENTELLE TECHNIK DER PHYSIK; ISSN 0014-4924; DDR; DA. 1981; VOL. 29; NO 6; PP. 543-550; ABS. RUS/ENG; BIBL. 2 REF.Article